? semiconductor components industries, llc, 2006 july, 2006 ? rev. 2 1 publication order number: ntljf3117p/d ntljf3117p power mosfet and schottky diode ?20 v, ?4.1 a, p?channel, with 2.0 a schottky barrier diode, 2x2 mm, cool package features ? fetky configuration with mosfet plus low vf schottky diode ? cool package provides exposed drain pad for excellent thermal conduction ? 2x2 mm footprint same as sc?88 package design ? independent pinout provides circuit design flexibility ? low profile (< 0.8 mm) for easy fit in thin environment ? high current schottky diode: 2 a current rating ? this is a pb?free device applications ? optimized for portable applications like cell phones, digital cameras, media players, etc. ? dc?dc buck circuit ? li?ion battery applications ? color display and camera flash regulators maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain?to?source voltage v dss ?20 v gate?to?source voltage v gs 8.0 v continuous drain current (note 1) steady state t a = 25 c i d ?3.3 a t a = 85 c ?2.4 t 5 s t a = 25 c ?4.1 power dissipation (note 1) steady state t a = 25 c p d 1.5 w t 5 s 2.3 continuous drain current (note 2) steady state t a = 25 c i d ?2.3 a t a = 85 c ?1.6 power dissipation (note 2) t a = 25 c p d 0.71 w pulsed drain current t p = 10 s i dm ?20 a operating junction and storage temperature t j , t stg ?55 to 150 c source current (body diode) (note 2) i s ?1.9 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). 2. surface mounted on fr4 board using the minimum recommended pad size of 30 mm 2 , 2 oz cu. 1 2 3 6 5 4 a n/c d k g s http://onsemi.com ?20 v 30 v 135 m @ ?2.5 v 100 m @ ?4.5 v 2.0 a r ds(on) max ?4.1 a 0.47 v i d max (note 1) v (br)dss mosfet schottky diode v r max i f max v f typ 200 m @ ?1.8 v g s p?channel mosfet d k a schottky diode jh = specific device code m = date code = pb?free package (note: microdot may be in either location) jhm 1 2 3 6 5 4 wdfn6 case 506an marking diagram (top view) 1 see detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. ordering information pin connections k d
ntljf3117p http://onsemi.com 2 schottky diode maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit peak repetitive reverse voltage v rrm 30 v dc blocking voltage v r 30 v average rectified forward current i f 2.0 a thermal resistance ratings parameter symbol max unit junction?to?ambient ? steady state (note 3) r ja 83 c/w junction?to?ambient ? t 5 s (note 3) r ja 54 junction?to?ambient ? steady state min pad (note 4) r ja 177 3. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). 4. surface mounted on fr4 board using the minimum recommended pad size of 30 mm 2 , 2 oz cu. mosfet electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain?to?source breakdown voltage v (br)dss v gs = 0 v, i d = ?250 a ?20 v drain?to?source breakdown voltage temperature coefficient v (br)dss /t j i d = ?250 a, ref to 25 c 9.95 mv/ c zero gate voltage drain current i dss v ds = ?16 v, v gs = 0 v t j = 25 c ?1.0 a t j = 85 c ?10 gate?to?source leakage current i gss v ds = 0 v, v gs = 8.0 v 100 na on characteristics (note 5) gate threshold voltage v gs(th) v gs = v ds , i d = ?250 a ?0.4 ?0.7 ?1.0 v negative threshold temperature coefficient v gs(th) /t j 2.44 mv/ c drain?to?source on?resistance r ds(on) v gs = ?4.5, i d = ?2.0 a 75 100 m v gs = ?2.5, i d = ?2.0 a 101 135 v gs = ?1.8, i d = ?1.6 a 150 200 forward transconductance g fs v ds = ?5.0 v, i d = ?2.0 a 3.1 s charges, capacitances and gate resistance input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = ?10 v 531 pf output capacitance c oss 91 reverse transfer capacitance c rss 56 total gate charge q g(tot) v gs = ?4.5 v, v ds = ?10 v, i d = ?2.0 a 5.5 6.2 nc threshold gate charge q g(th) 0.7 gate?to?source charge q gs 1.0 gate?to?drain charge q gd 1.4 gate resistance r g 8.8 switching characteristics (note 6) turn?on delay time t d(on) v gs = ?4.5 v, v dd = ?5.0 v, i d = ?1.0 a, r g = 6.0 5.2 ns rise time t r 13.2 turn?off delay time t d(off) 13.7 fall time t f 19.1 5. pulse test: pulse width 300 s, duty cycle 2%. 6. switching characteristics are independent of operating junction temperatures.
ntljf3117p http://onsemi.com 3 mosfet electrical characteristics (t j = 25 c unless otherwise noted) parameter unit max typ min test conditions symbol switching characteristics (note 6) turn?on delay time t d(on) v gs = ?4.5 v, v dd = ?10 v, i d = ?2.0 a, r g = 2.0 5.5 ns rise time t r 15 turn?off delay time t d(off) 19.8 fall time t f 21.6 drain?source diode characteristics forward recovery voltage v sd v gs = 0 v, is = ?1.0 a t j = 25 c ?0.75 ?1.0 v t j = 125 c ?0.64 reverse recovery time t rr v gs = 0 v, d isd /d t = 100 a/ s, i s = ?1.0 a 16.2 ns charge time t a 10.6 discharge time t b 5.6 reverse recovery time q rr 5.7 nc 5. pulse test: pulse width 300 s, duty cycle 2%. 6. switching characteristics are independent of operating junction temperatures. schottky diode electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min typ max unit maximum instantaneous forward voltage v f i f = 0.1 a 0.34 0.39 v i f = 1.0 a 0.47 0.53 maximum instantaneous reverse current i r v r = 30 v 17 20 a v r = 20 v 3.0 8.0 v r = 10 v 2.0 4.5 schottky diode electrical characteristics (t j = 85 c unless otherwise noted) parameter symbol test conditions min typ max unit maximum instantaneous forward voltage v f i f = 0.1 a 0.22 0.35 v i f = 1.0 a 0.40 0.50 maximum instantaneous reverse current i r v r = 30 v 0.22 2.5 ma v r = 20 v 0.11 1.6 v r = 10 v 0.06 1.2 schottky diode electrical characteristics (t j = 125 c unless otherwise noted) parameter symbol test conditions min typ max unit maximum instantaneous forward voltage v f i f = 0.1 a 0.2 0.29 v i f = 1.0 a 0.4 0.47 maximum instantaneous reverse current i r v r = 30 v 2.0 20 ma v r = 20 v 1.1 10.9 v r = 10 v 0.63 8.4 schottky diode electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min typ max unit capacitance c v r = 5.0 v, f = 1.0 mhz 38 pf 7. surface?mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [2 oz] including traces). 8. surface?mounted on fr4 board using the minimum recommended pad size of 30 mm 2 , 2 oz cu. 9. pulse test: pulse width 300 s, duty cycle 2%. 10. switching characteristics are independent of operating junction temperatures.
ntljf3117p http://onsemi.com 4 typical performance curves (t j = 25 c unless otherwise noted) 12 0.15 5 1.4 1.6 1.2 0.8 0.6 10000 0 4.5 2 1 ?v ds , drain?to?source voltage (volts) ?i d , drain current (amps) 0 ?v gs , gate?to?source voltage (volts) figure 1. on?region characteristics figure 2. transfer characteristics ?i d , drain current (amps) 1.0 2.0 1.5 figure 3. on?resistance versus drain current ?i d , drain current (amps) figure 4. on?resistance versus drain current and gate voltage ?i d , drain current (amps) r ds(on) , drain?to?source resistance ( ) r ds(on) , drain?to?source resistance ( ) figure 5. on?resistance variation with temperature t j , junction temperature ( c) figure 6. drain?to?source leakage current versus voltage ?v ds , drain?to?source voltage (volts) r ds(on) , drain?to?source resistance (normalized) ?i dss , leakage (na) ?50 50 25 0 ?25 75 125 100 1 212 10 4 3 1 2 v ds 10 v t j = 25 c t j = ?55 c t j = 125 c v gs = 0 v i d = ?2.2 a v gs = ?4.5 v 3 t j = 100 c t j = 150 c 2 0 1.5 t j = 25 c 20 v gs = ?1.9 v to ?6 v ?1.5 v 3 1000 4 4 0 4 t j = 25 c 150 10 2.5 ?1.4 v ?1.3 v ?1.2 v t j = 25 c v gs = ?4.5 v t j = ?55 c t j = 100 c 0 v gs = ?4.5 v v gs = ?2.5 v 6 8 14 16 18 2 0.5 2.5 3 5 3.5 ?1.6 v ?1.7 v 1 3 5 0.05 100 2.5 1.5 0.5 0.5 1.5 2.5 3.5 4.5 ?1.8 v 0.1 0.05 0.1 0.04 0.07 0.06 0.08 0.09 4 1.0
ntljf3117p http://onsemi.com 5 typical performance curves (t j = 25 c unless otherwise noted) 5 5 15 20 gate?to?source or drain?to?source voltage (volts) c, capacitance (pf) figure 7. capacitance variation 800 0 v gs v ds 1000 400 010 v gs = 0 v t j = 25 c c oss c rss 1200 c iss figure 8. gate?to?source and drain?to?source voltage versus total charge figure 9. resistive switching time variation versus gate resistance r g , gate resistance (ohms) 1 10 100 1000 1 t, time (ns) 100 t r t d(off) t d(on) t f 10 v dd = ?15 v i d = ?2.2 a v gs = ?4.5 v 2.5 0 0 ?v sd , source?to?drain voltage (volts) v gs = 0 v figure 10. diode forward voltage versus current 1.0 1 0.6 2 figure 11. maximum rated forward biased safe operating area 0.1 1 100 ?v ds , drain?to?source voltage (volts) 1 100 r ds(on) limit thermal limit package limit 10 10 t c = 25 c t j = 150 c single pulse 1 ms 100 s 10 ms dc 10 s t j = 25 c 0.1 0.01 ?v gs , gate?to?source voltage (volts) 0 3 0 q g , total gate charge (nc) 5 4 4 3 i d = ?2.2 a t j = 25 c v gs q gs q gd qt 2 1 5 8 0 20 12 4 ?v ds , drain?to?source voltage (volts) v ds 16 3 0.8 0.4 0.2 ?i d , drain current (amps) ?i s , source current (amps) 600 200 1.5 0.5 t j = 150 c 6 2 1 0.1 0.7 0.9 0.5 0.3 v ds = 0 v *see note 2 on page 1
ntljf3117p http://onsemi.com 6 typical performance curves (t j = 25 c unless otherwise noted) figure 12. thermal response r(t), effective transient thermal resistance t, time ( s) 1 1000 0.1 0.2 0.02 d = 0.5 0.05 0.01 single pulse r ja (t) = r(t) r ja d curves apply for power pulse train shown read time at t 1 t j(pk) ? t a = p (pk) r ja (t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 100 1000 10 0.1 0.001 0.0001 0.000001 0.1 100 10 1 0.01 0.00001 *see note 2 on page 1
ntljf3117p http://onsemi.com 7 typical schottky performance curves (t j = 25 c unless otherwise noted) figure 13. typical forward voltage figure 14. maximum forward voltage figure 15. typical reverse current figure 16. maximum reverse current v f , instantaneous forward voltage (volts) 10 1.0 0.1 0 v r , reverse voltage (volts) 100e?9 i f , instantaneous forward current (amp s i i 0.6 0.8 10 20 0.1 0.2 0.4 30 , instantaneous forward current (amps ) f t j = 25 c t j = 85 c t j = 125 c t j = ?55 c 10e?6 100e?6 t j = 25 c t j = 85 c t j = 125 c 1.0e?3 10e?3 1.0e+0 , reverse current (amps) r i , maximum reverse current (amps) r 0.9 0.7 0.3 0.5 v f , maximum forward voltage (volts) 10 1.0 0.1 0.6 0.8 0.1 0.2 0.4 t j = 25 c t j = 85 c t j = 125 c 0 .9 0.7 0.3 0.5 100e?3 1.0e?6 0 v r , reverse voltage (volts) 100e?9 10 20 3 0 10e?6 100e?6 t j = 25 c t j = 85 c t j = 125 c 1.0e?3 10e?3 1.0e+0 100e?3 1.0e?6 ordering information device package shipping ? ntljf3117pt1g wdfn6 (pb?free) 3000 / tape & reel NTLJF3117PTAG wdfn6 (pb?free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
ntljf3117p http://onsemi.com 8 package dimensions 2x c a seating plane d b e 0.10 c a3 a a1 2x 2x 0.10 c wdfn6 2x2 case 506an?01 issue c dim a min max millimeters 0.70 0.80 a1 0.00 0.05 a3 0.20 ref b 0.25 0.35 d 2.00 bsc d2 0.57 0.77 0.90 1.10 e 2.00 bsc 0.25 ref e2 e 0.65 bsc k 0.20 0.30 l 0.15 ref j pin one reference 0.08 c 0.10 c 6x a 0.10 c note 3 l e d2 e2 b b 3 6 6x 1 k 4 6x 6x 0.05 c 4x d2 2x j 6x mounting footprint 2.30 6x pitch bottom view soldermask defined 0.25 0.25 0.72 0.35 0.65 1.05 6x 0.43 dimensions: millimeters 1 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5773?3850 ntljf3117p/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative fetky is a registered trademark of international rectifier corporation. cool is a trademark of semiconductor components industries, llc (scillc).
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